| PART |
Description |
Maker |
| NL10276BC28-05D |
36 cm 14.1 inches, 1024 x 768 pixels, 262,144 colors, LVDS Interface, High luminance
|
NEC[NEC]
|
| NL10276AC30-01 NL10276AC30-01A |
38 cm 15 inches, 1024 x 768 pixels, Full-color, Multi-scan Function, Built-in backlight with inverter Ultra wide viewing angle
|
NEC[NEC]
|
| AK5364096D AK5364096G AK5364096S AK5364096W AK5364 |
32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory 32,768 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit Corporation
Accutek Microcircuit, Corp.
|
| UPD43256AGX-10LL UPD43256AC-10LL |
32,768 X 8-BIT STATIC CMOS RAM 32,768 x 8位静态CMOS存储
|
NEC Corp.
NEC, Corp.
|
| KAF-1001E |
1024(H) x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification
From old datasheet system
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| ADN2850ARU25 ADN2850ARU25-REEL7 ADN2850ACP25-RL7 A |
TERM,RING NON-INSUL. DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, QCC16
Nonvolatile Memory, Dual 1024 Position Programmable Resistors
Nonvolatile Memory/ Dual 1024 Position Programmable Resistors
|
Analog Devices, Inc.
|
| AMD27C256 AM27C256-120 AM27C256-120EC AM27C256-120 |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM
Circular Connector; No. of Contacts:5; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
8-input positive-NAND gates 14-SO 0 to 70 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO32
Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-PDIP 0 to 70
Universal shift / storage registers 20-SOIC 0 to 70
8-input positive-NAND gates 14-SOIC 0 to 70
8-input positive-NAND gates 14-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-SO 0 to 70
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70
256 Kilobit (32/768 x 8-Bit) CMOS EPROM
|
Cypress Semiconductor, Corp.
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| S9737-15 |
1024 x 1024 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
|
| LC87F5164A |
8-Bit Single Chip Microcontroller with 64KB(65535 ×8 bits) FEPROM and 1024 Byte(1024 ×8 bits) RAM On Chip(8位单片微控制器（带片4K5535 ×8 bit）字节闪速EPROM024
|
Sanyo Electric Co.,Ltd.
|
| S9737-01 S9737-02 S9737-03 S9737 |
CCD area image sensor 1024 × 1024 pixels, front-illuminated FFT-CCDs
CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
|
| KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter .
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
|
Optek Technology
|
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